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| 1 features ? single voltage read/write operation: 2.65v to 3.3v (bv), 3.0v to 3.6v (lv) accesstime?70ns sector erase architecture ? thirty-one 32k word (64k bytes) sectors with individual write lockout ? eight 4k word (8k bytes) sectors with individual write lockout fast word program time ? 20 s fast sector erase time ? 300 ms suspend/resume feature for erase and program ? supports reading and programming from any sector by suspending erase of a different sector ? supports reading any byte/word by suspending programming of any other byte/word low-power operation ?30maactive ? 10 a standby data polling, toggle bit, ready/busy for end of program detection vpp pin for write protection and accelerated program/erase operations reset input for device initialization sector lockdown support tsop and cbga package options top or bottom boot block configuration available 128-bit protection register description the at49bv/lv16x(t) is a 3.0-volt 16-megabit flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. the x16 data appears on i/o0 - i/o15; the x8 data appears on i/o0 - i/o7. the memory is divided into 39 sectors for erase operations. the device is offered in a 48-lead tsop, 45-ball and 48-ball cbga packages. the device has ce and oe control signals to avoid any bus contention. this device can be read or reprogrammed using a single 2.65v power supply, making it ideally suited for in-system programming. 16-megabit (1mx16/2mx8) 3-volt only flash memory at49bv160 at49bv160t at49bv161 at49bv161t at49lv161 at49lv161t pin configurations pin name function a0 - a19 addresses ce chip enable oe output enable we write enable reset reset rdy/busy ready/busy output vpp write protection and power supply for accelerated program/erase operations i/o0 - i/o14 data inputs/outputs i/o15 (a-1) i/o15 (data input/output, word mode) a-1 (lsb address input, byte mode) byte selects byte or word mode nc no connect vccq output power supply rev. 1427j?flash?01/02
2 at49bv160(t)/161(t) 1427j?flash?01/02 at49bv160(t) cbga top view a b c d e f 1 234567 a13 a14 a15 a16 vccq gnd a11 a10 a12 i/o14 i/o15 i/o7 a8 we a9 i/o5 i/o6 i/o13 vpp rst i/o11 i/o12 i/o4 a18 i/o2 i/o3 vcc a19 a17 a6 i/o8 i/o9 i/o10 a7 a5 a3 ce i/o0 i/o1 a4 a2 a1 a0 gnd oe 8 tsop top view type 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 a15 a14 a13 a12 a11 a10 a9 a8 nc nc we reset vpp nc a19 a18 a17 a7 a6 a5 a4 a3 a2 a1 a16 vccq gnd i/o15 i/o7 i/o14 i/o6 i/o13 i/o5 i/o12 i/o4 vcc i/o11 i/o3 i/o10 i/o2 i/o9 i/o1 i/o8 i/o0 oe gnd ce a0 cbga top view rdy/busy nc a18 nc i/o2 i/o10 i/o11 i/o3 a3 a4 a2 a1 a0 ce oe vss a7 a17 a6 a5 i/o0 i/o8 i/o9 i/o1 we reset vpp a19 i/o5 i/o12 vcc i/o4 a9 a8 a10 a11 i/o7 i/o14 i/o13 i/o6 a13 a12 a14 a15 a16 byte i/o15 vss a b c d e f g h 1 23456 /a-1 tsop top view type 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 a15 a14 a13 a12 a11 a10 a9 a8 a19 nc we reset vpp nc rdy/busy a18 a17 a7 a6 a5 a4 a3 a2 a1 a16 byte gnd i/o15/a-1 i/o7 i/o14 i/o6 i/o13 i/o5 i/o12 i/o4 vcc i/o11 i/o3 i/o10 i/o2 i/o9 i/o1 i/o8 i/o0 oe gnd ce a0 at49bv/lv161(t) 3 at49bv160(t)/161(t) 1427j ? flash ? 01/02 the device powers on in the read mode. command sequences are used to place the device in other operation modes such as program and erase. the device has the capability to protect the data in any sector. (see ? sector lockdown ? section.) to increase the flexibility of the device, it contains an erase suspend and program suspend feature. this feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. the end of a program or an erase cycle is detected by the ready/busy pin, data polling or by the toggle bit. the vpp pin provides data protection and faster programming. when the v pp input is below 0.8v, the program and erase functions are inhibited. when v pp is at 1.65v or above, normal program and erase operations can be performed. with v pp at 5.0v or 12.0v, the program and erase operations are accelerated. a six-byte command (enter single pulse program mode) sequence to remove the requirement of entering the three-byte program sequence is offered to further improve programming time. after entering the six-byte code, only single pulses on the write control lines are required for writing into the device. this mode (single pulse byte/word program) is exited by powering down the device, or by pulsing the reset pin low for a minimum of 500 ns and then bringing it back to v cc . erase, erase suspend/resume, and program suspend/resume commands will not work while in this mode; if entered they will result in data being programmed into the device. it is not recommended that the six-byte code reside in the software of the final product but only exist in external programming code. when using the at49bv160(t) pinout configuration, the device always operates in the word mode. in the at49bv/lv161(t) configuration, the byte pin controls whether the device data i/o pins operate in the byte or word configuration. if the byte pin is set at logic ? 1 ? , the device is in word configuration, i/o0 - i/o15 are active and controlled by ce and oe . if the byte pin is set at logic ? 0 ? , the device is in byte configuration, and only data i/o pins i/o0 - i/o7 are active and controlled by ce and oe . the data i/o pins i/o8 - i/o14 are tri- stated, and the i/o15 pin is used as an input for the lsb (a-1) address function. 4 at49bv160(t)/161(t) 1427j ? flash ? 01/02 block diagram identifier register status register data comparator output multiplexer output buffer input buffer command register data register y-gating write state machine program/erase voltage switch ce we oe reset byte rdy/busy vpp vcc gnd y-decoder x-decoder input buffer address latch i/o0 - i/o15/a-1 a0 - a19 main memory 5 at49bv160(t)/161(t) 1427j ? flash ? 01/02 device operation read: the at49bv/lv16x(t) is accessed like an eprom. when ce and oe are low and we is high, the data stored at the memory location determined by the address pins are asserted on the outputs. the outputs are put in the high-impedance state whenever ce or oe is high. this dual-line control gives designers flexibility in preventing bus contention. command sequences: when the device is first powered on, it will be reset to the read or standby mode, depending upon the state of the control line inputs. in order to perform other device functions, a series of command sequences are entered into the device. the command sequences are shown in the ? command definition in hex ? tableonpage13(i/o8-i/o15are don ? t care inputs for the command codes). the command sequences are written by applying a low pulse on the we or ce input with ce or we low (respectively) and oe high. the address is latched on the falling edge of ce or we , whichever occurs last. the data is latched by the first rising edge of ce or we . standard microprocessor write timings are used. the address locations used in the command sequences are not affected by entering the command sequences. reset: a reset input pin is provided to ease some system applications. when reset is at a logic high level, the device is in its standard operating mode. a low level on the reset input halts the present device operation and puts the outputs of the device in a high-impedance state. when a high level is reasserted on the reset pin, the device returns to the read or standby mode, depending upon the state of the control inputs. erasure: before a byte/word can be reprogrammed, it must be erased. the erased state of memory bits is a logical ? 1 ? . the entire device can be erased by using the chip erase com- mand or individual sectors can be erased by using the sector erase command. chip erase: the entire device can be erased at one time by using the six-byte chip erase software code. after the chip erase has been initiated, the device will internally time the erase operation so that no external clocks are required. the maximum time to erase the chip is t ec . if the sector lockdown has been enabled, the chip erase will not erase the data in the sector that has been locked out; it will erase only the unprotected sectors. after the chip erase, the device will return to the read or standby mode. sector erase: as an alternative to a full chip erase, the device is organized into 39 sec- tors (sa0 - sa38) that can be individually erased. the sector erase command is a six-bus cycle operation. the sector address is latched on the falling we edge of the sixth cycle while the 30h data input command is latched on the rising edge of we . the sector erase starts after the rising edge of we of the sixth cycle. the erase operation is internally controlled; it will automatically time to completion. the maximum time to erase a sector is t sec . when the sec- tor programming lockdown feature is not enabled, the sector will erase (from the same sector erase command). an attempt to erase a sector that has been protected will result in the oper- ation terminating in 2 s. byte/word programming: once a memory block is erased, it is programmed (to a logi- cal ? 0 ? ) on a byte-by-byte or on a word-by-word basis. programming is accomplished via the internal device command register and is a four-bus cycle operation. the device will automati- cally generate the required internal program pulses. 6 at49bv160(t)/161(t) 1427j ? flash ? 01/02 any commands written to the chip during the embedded programming cycle will be ignored. if a hardware reset happens during programming, the data at the location being programmed will be corrupted. please note that a data ? 0 ? cannot be programmed back to a ? 1 ? ;onlyerase operations can convert ? 0 ? sto ? 1 ? s. programming is completed after the specified t bp cycle time. the data polling feature or the toggle bit feature may be used to indicate the end of a program cycle. if the erase/program status bit is a ? 1 ? , the device was not able to verify that the erase or program operation was performed successfully. vpp pin: the circuitry of the at49bv/lv16x(t) is designed so that the device can be pro- grammed or erased from the v cc power supply or from the vpp input pin. when v pp is greater than 1.65v and less than or equal to the vcc pin, the device selects the v cc supply for pro- gramming and erase operations. when the vpp pin is greater than the v cc supply, the device will select the v pp input as the power supply for programming and erase operations. the device will allow for some variations between the v pp input and the v cc power supply in its selection of v cc or v pp for program or erase operations. if the vpp pin is within 0.3v of v cc for 2.65v < v cc < 3.6v, then the program or erase operations will use v cc and disregard the v pp input signal. when the v pp signal is used for program and erase operations, the v pp must be in the 5v 0.5v or 12v 0.5v range to ensure proper operation. the v pp pin cannot be left floating. program/erase status: the device provides several bits to determine the status of a program or erase operation: i/o2, i/o3, i/o5, i/o6 and i/o7. the ? status bit table ? on page 12 and the following four sections describe the function of these bits. to provide greater flexibility for system designers, the at49bv/lv16x(t) contains a programmable configuration register. the configuration register allows the user to specify the status bit operation. the configuration register can be set to one of two different values, ? 00 ? or ? 01 ? . if the configuration register is set to ? 00 ? , the part will automatically return to the read mode after a successful program or erase operation. if the configuration register is set to a ? 01 ? , a product id exit command must be given after a successful program or erase operation before the part will return to the read mode. it is important to note that whether the configuration register is set to a ? 00 ? or to a ? 01 ? , any unsuccessful program or erase operation requires using the product id exit command to return the device to read mode. the default value (after power-up) for the configuration regis- ter is ? 00 ? . using the four-bus cycle set configuration register command as shown in the ? command definition in hex ? table on page 13, the value of the configuration register can be changed. voltages applied to the reset pin will not alter the value of the configuration regis- ter. the value of the configuration register will affect the operation of the i/o7 status bit as described below. data polling: the at49bv/lv16x(t) features data pollingtoindicatetheendofapro- gram cycle. if the status configuration register is set to a ? 00 ? , during a program cycle an attempted read of the last byte/word loaded will result in the complement of the loaded data on i/o7. once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. during a chip or sector erase operation, an attempt to read the device will give a ? 0 ? on i/o7. once the program or erase cycle has completed, true data will be read from the device. data polling may begin at any time during the program cycle. please see ? status bit table ? on page 12 for more details. 7 at49bv160(t)/161(t) 1427j ? flash ? 01/02 if the status bit configuration register is set to a ? 01 ? , the i/o7 status bit will be low while the device is actively programming or erasing data. i/o7 will go high when the device has com- pleted a program or erase operation. once i/o7 has gone high, status information on the other pins can be checked. the data polling status bit must be used in conjunction with the erase/program and v pp status bit as shown in the algorithm in figures 1 and 2 on page 10. toggle bit: in addition to data polling, the at49bv/lv16x(t) provides another method for determining the end of a program or erase cycle. during a program or erase operation, suc- cessive attempts to read data from the memory will result in i/o6 toggling between one and zero. once the program cycle has completed, i/o6 will stop toggling and valid data will be read. examining the toggle bit may begin at any time during a program cycle. please see ? sta- tus bit table ? on page 12 for more details. the toggle bit status bit should be used in conjunction with the erase/program and v pp status bit as shown in the algorithm in figures 3 and 4 on page 11. erase/program status bit: the device offers a status bit on i/o5, which indicates whether the program or erase operation has exceeded a specified internal pulse count limit. if the status bit is a ? 1 ? , the device is unable to verify that an erase or a byte/word program oper- ation has been successfully performed. the device may also output a ? 1 ? on i/o5 if the system tries to program a ? 1 ? to a location that was previously programmed to a ? 0 ? .onlyanerase operation can change a ? 0 ? back to a ? 1 ? . if a program (sector erase) command is issued to a protected sector, the protected sector will not be programmed (erased). the device will go to a status read mode and the i/o5 status bit will be set high, indicating the program (erase) opera- tion did not complete as requested. once the erase/program status bit has been set to a ? 1 ? , the system must write the product id exit command to return to the read mode. the erase/program status bit is a ? 0 ? while the erase or program operation is still in progress. please see ? status bit table ? on page 12 for more details. v pp status bit: the at49bv/lv16x(t) provides a status bit on i/o3, which provides infor- mation regarding the voltage level of the vpp pin. during a program or erase operation, if the voltage on the vpp pin is not high enough to perform the desired operation successfully, the i/o3 status bit will be a ? 1 ? . once the v pp status bit has been set to a ? 1 ? , the system must write the product id exit command to return to the read mode. on the other hand, if the volt- age level is high enough to perform a program or erase operation successfully, the v pp status bit will output a ? 0 ? . please see ? status bit table ? on page 12 for more details. sector lockdown: each sector has a programming lockdown feature. this feature pre- vents programming of data in the designated sectors once the feature has been enabled. these sectors can contain secure code that is used to bring up the system. enabling the lock- down feature will allow the boot code to stay in the device while data in the rest of the device is updated. this feature does not have to be activated; any sector ? s usage as a write-protected region is optional to the user. at power-up or reset, all sectors are unlocked. to activate the lockdown for a specific sector, the six-bus cycle sector lockdown command must be issued. once a sector has been locked down, the contents of the sector is read-only and cannot be erased or programmed. sector lockdown detection: a software method is available to determine if program- ming of a sector is locked down. when the device is in the software product identification mode (see ? software product identification entry/exit ? sections on page 24), a read from address location 00002h within a sector will show if programming the sector is locked down. if thedataoni/o0islow,thesectorcanbeprogrammed;ifthedataoni/o0ishigh,theprogram lockdown feature has been enabled and the sector cannot be programmed. the software product identification exit code should be used to return to standard operation. 8 at49bv160(t)/161(t) 1427j ? flash ? 01/02 sector lockdown override: the only way to unlock a sector that is locked down is through reset or power-up cycles. after power-up or reset, the content of a sector that is locked down can be erased and reprogrammed. erase suspend/erase resume: theerasesuspendcommandallowsthesystemto interrupt a sector erase or chip erase operation and then program or read data from a different sector within the memory. after the erase suspend command is given, the device requires a maximum time of 15 s to suspend the erase operation. after the erase operation has been suspended, the system can then read data or program data to any other sector within the device. an address is not required during the erase suspend command. during a sector erase suspend, another sector cannot be erased. to resume the sector erase operation, the system must write the erase resume command. the erase resume command is a one-bus cycle command. the device also supports an erase suspend during a complete chip erase. while the chip erase is suspended, the user can read from any sector within the memory that is pro- tected. the command sequence for a chip erase suspend and a sector erase suspend are the same. program suspend/program resume: the program suspend command allows the system to interrupt a programming operation and then read data from a different byte/word within the memory. after the program suspend command is given, the device requires a max- imum of 15 s to suspend the programming operation. after the programming operation has been suspended, the system can then read data from any other byte/word within the device. an address is not required during the program suspend operation. to resume the program- ming operation, the system must write the program resume command. the program suspend and resume are one-bus cycle commands. the command sequence for the erase suspend and program suspend are the same, and the command sequence for the erase resume and program resume are the same. product identification: the product identification mode identifies the device and man- ufacturer as atmel. it may be accessed by hardware or software operation. the hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the atmel product. for details, see ? operating modes ? on page 17 (for hardware operation) or ? software product identification entry/exit ? on page 24. the manufacturer and device codes are the same for both modes. 128-bit protection register: the at49bv/lv16x(t) contains a 128-bit register that can be used for security purposes in system design. the protection register is divided into two 64-bit blocks. the two blocks are designated as block a and block b. the data in block a is non-changeable and is programmed at the factory with a unique number. the data in block b is programmed by the user and can be locked out such that data in the block cannot be repro- grammed. to program block b in the protection register, the four-bus cycle program protection register command must be used as shown in the ? command definition in hex ? table on page 13. to lock out block b, the four-bus cycle lock protection register command must be used as shown in the ? command definition in hex ? table on page 13. data bit d1 must be zero during the fourth bus cycle. all other data bits during the fourth bus cycle are don ? t cares. to determine whether block b is locked out, the product id entry command is given followed by a read operation from address 80h. if data bit d1 is zero, block b is locked. if data bit d1 is one, block b can be reprogrammed. please see the ? protection register addressing table ? on page 14 for the address locations in the protection register. to read the protection register, the product id entry command is given followed by a normal read opera- tion from an address within the protection register. after determining whether block b is protected or not, or reading the protection register, the product id exit command must be given prior to performing any other operation. 9 at49bv160(t)/161(t) 1427j ? flash ? 01/02 rdy/busy : for the at49bv/lv161(t), an open-drain ready/busy output pin provides another method of detecting the end of a program or erase operation. rdy/busy is actively pulled low during the internal program and erase cycles and is released at the completion of the cycle. the open-drain connection allows for or-tying of several devices to the same rdy/busy line. please see ? status bit table ? on page 12 for more details. hardware data protection: the hardware data protection feature protects against inadvertent programs to the at49bv/lv16x(t) in the following ways: (a) v cc sense: if v cc is below 1.8v (typical), the program function is inhibited. (b) v cc power-on delay: once v cc has reached the v cc sense level, the device will automatically time out 10 ms (typical) before pro- gramming. (c) program inhibit: holding any one of oe low, ce high or we high inhibits program cycles. (d) noise filter: pulses of less than 15 ns (typical) on the we or ce inputs will not initiate a program cycle. (e) program inhibit: v pp is less than v ilpp .(f)v pp power-on delay: once v pp has reached 1.65v, program and erase operations can occur after 100 ns. input levels: while operating with a 2.65v to 3.6v power supply, the address inputs and control inputs (oe ,ce and we ) may be driven from 0 to 5.5v without adversely affecting the operation of the device. the i/o lines can only be driven from 0 to v cc +0.6v. output levels: for the at49bv160(t), output high levels (v oh ) are equal to v ccq -0.2v (not v cc ). for 2.65v - 3.6v output levels, v ccq must be tied to v cc . for 1.8v - 2.2v output lev- els, v ccq must be regulated to 2.0v 10%, while v cc must be regulated to 2.65v - 3.0v (for minimum power). 10 at49bv160(t)/161(t) 1427j ? flash ? 01/02 figure 1. data polling algorithm (configuration register = 00) notes: 1. va = valid address for programming. during a sec- tor erase operation, a valid address is any sector address within the sector being erased. during chip erase, a valid address is any non-protected sector address. 2. i/o7 should be rechecked even if i/o5 = ? 1 ? because i/o7 may change simultaneously with i/o5. start read i/o7 - i/o0 addr = va i/o7 = data? i/o3, i/o5 = 1? read i/o7 - i/o0 addr = va i/o7 = data? program/erase operation not successful, write product id exit command no no no yes yes yes program/erase operation successful, device in read mode figure 2. data polling algorithm (configuration register = 01) note: 1. va = valid address for programming. during a sec- tor erase operation, a valid address is any sector address within the sector being erased. during chip erase, a valid address is any non-protected sector address. start read i/o7 - i/o0 addr = va i/o7 = 1? i/o3, i/o5 = 1? program/erase operation not successful, write product id exit command no no yes yes program/erase operation successful, write product id exit command 11 at49bv160(t)/161(t) 1427j ? flash ? 01/02 figure 3. toggle bit algorithm (configuration register = 00) note: 1. the system should recheck the toggle bit even if i/o5 = ? 1 ? because the toggle bit may stop toggling as i/o5 changes to ? 1 ? . start read i/o7 - i/o0 read i/o7 - i/o0 toggle bit = toggle? i/o3, i/o5 = 1? read i/o7 - i/o0 twice toggle bit = toggle? program/erase operation not successful, write product id exit command program/erase operation successful no no no yes yes yes figure 4. toggle bit algorithm (configuration register = 01) note: 1. the system should recheck the toggle bit even if i/o5 = ? 1 ? because the toggle bit may stop toggling as i/o5 changes to ? 1 ? . start read i/o7 - i/o0 read i/o7 - i/o0 toggle bit = toggle? i/o3, i/o5 = 1? read i/o7 - i/o0 twice toggle bit = toggle? program/erase operation not successful, write product id exit command program/erase operation successful, write product id exit command no no no yes yes yes 12 at49bv160(t)/161(t) 1427j ? flash ? 01/02 notes: 1. i/o5 switches to a ? 1 ? when a program or an erase operation has exceeded the maximum time limits or when a program or sector erase operation is performed on a protected sector. 2. i/o3 switches to a ? 1 ? when the v pp level is not high enough to successfully perform program and erase operations. status bit table status bit i/o7 i/o7 i/o6 i/o5 (1) i/o3 (2) i/o2 rdy/busy configuration register: 00 01 00/01 00/01 00/01 00/01 00/01 programming i/o7 0 toggle 0 0 1 0 erasing 0 0 toggle 0 0 toggle 0 erase suspended & read erasing sector 1 1 1 0 0 toggle 1 erase suspended & read non-erasing sector data data data data data data 1 erase suspended & program non-erasing sector i/o7 0 toggle 0 0 toggle 0 13 at49bv160(t)/161(t) 1427j ? flash ? 01/02 notes: 1. the data format shown for each bus cycle is as follows; i/o7 - i/o0 (hex). in word operation i/o15 - i/o8 are don ? tcare. the address format shown for each bus cycle is as follows: a11 - a0 (hex). address a19 through a11 are don ? tcare in the word mode. address a19 through a11 and a-1 are don ? t care in the byte mode. 2. since a11 is a don ? t care, aaa can be replaced with 2aa. 3. sa = sector address. any byte/word address within a sector can be used to designate the sector address (see pages 15 and 16 for details). 4. once a sector is in the lockdown mode, data in the protected sector cannot be changed unless the chip is reset or power cycled. 5. either one of the product id exit commands can be used. 6. if data bit d1 is ? 0 ? , block b is locked. if data bit d1 is ? 1 ? , block b can be reprogrammed. 7. the default state (after power-up) of the configuration register is ? 00 ? . commanddefinitioninhex (1) command sequence bus cycles 1st bus cycle 2nd bus cycle 3rd bus cycle 4th bus cycle 5th bus cycle 6th bus cycle addr data addr data addr data addr data addr data addr data read 1 addr d out chip erase 6 555 aa aaa (2) 55 555 80 555 aa aaa 55 555 10 sector erase 6 555 aa aaa 55 555 80 555 aa aaa 55 sa (3)(4) 30 byte/word program 4 555 aa aaa 55 555 a0 addr d in enter single pulse program mode 6 555 aa aaa 55 555 80 555 aa aaa 55 555 a0 single pulse byte/word program 1addrd in sector lockdown 6 555 aa aaa 55 555 80 555 aa aaa 55 sa (3)(4) 60 erase/program suspend 1 xxx b0 erase/program resume 1 xxx 30 product id entry 3 555 aa aaa 55 555 90 product id exit (5) 3 555 aa aaa 55 555 f0 product id exit (5) 1 xxx f0 program protection register 4 555 aa aaa 55 555 c0 addr d in lock protection register - block b 4 555 aa aaa 55 555 c0 080 x0 status of block b protection 4 555 aa aaa 55 555 90 80 d out (6) set configuration register 4 555 aa aaa 55 555 d0 xxx 00/01 (7) absolute maximum ratings* temperature under bias ................................ -55 cto+125 c *notice: stresses beyond those listed under ? absolute maximum ratings ? may cause permanent dam- age to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. storage temperature ..................................... -65 cto+150 c all input voltages (including nc pins) with respect to ground ...................................-0.6v to +6.25v all output voltages with respect to ground .............................-0.6v to v cc +0.6v voltage on oe and v pp with respect to ground ...................................-0.6v to +13.0v 14 at49bv160(t)/161(t) 1427j ? flash ? 01/02 note: 1. all address lines not specified in the above table must be ? 0 ? when accessing the protection register, i.e., a19 - a8 = 0. protection register addressing table word use block a7 a6 a5 a4 a3 a2 a1 a0 0 factory a 10000001 1 factory a 10000010 2 factory a 10000011 3 factory a 10000100 4 user b 10000101 5 user b 10000110 6 user b 10000111 7 user b 10001000 15 at49bv160(t)/161(t) 1427j ? flash ? 01/02 at49bv/lv 160/161 ? sector address table sector size (bytes/words) x8 address range (a19 - a-1) x16 address range (a19 - a0) sa0 8k/4k 000000 - 001fff 00000 - 00fff sa1 8k/4k 002000 - 003fff 01000 - 01fff sa2 8k/4k 004000 - 005fff 02000 - 02fff sa3 8k/4k 006000 - 007fff 03000 - 03fff sa4 8k/4k 008000 - 009fff 04000 - 04fff sa5 8k/4k 00a000 - 00bfff 05000 - 05fff sa6 8k/4k 00c000 - 00dfff 06000 - 06fff sa7 8k/4k 00e000 - 00ffff 07000 - 07fff sa8 64k/32k 010000 - 01ffff 08000 - 0ffff sa9 64k/32k 020000 - 02ffff 10000 - 17fff sa10 64k/32k 030000 - 03ffff 18000 - 1ffff sa11 64k/32k 040000 - 04ffff 20000 - 27fff sa12 64k/32k 050000 - 05ffff 28000 - 2ffff sa13 64k/32k 060000 - 06ffff 30000 - 37fff sa14 64k/32k 070000 - 07ffff 38000 - 3ffff sa15 64k/32k 080000 - 08ffff 40000 - 47fff sa16 64k/32k 090000 - 09ffff 48000 - 4ffff sa17 64k/32k 0a0000 - 0affff 5 0000 - 57fff sa18 64k/32k 0b0000 - 0bffff 58000 - 5ffff sa19 64k/32k 0c0000 - 0cffff 60000 - 67fff sa20 64k/32k 0d0000 - 0dffff 68000 - 6ffff sa21 64k/32k 0e0000 - 0effff 7 0000 - 77fff sa22 64k/32k 0f0000 - 0fffff 78000 - 7ffff sa23 64k/32k 100000 - 10ffff 80000 - 87fff sa24 64k/32k 110000 - 11ffff 88000 - 8ffff sa25 64k/32k 120000 - 12ffff 90000 - 97fff sa26 64k/32k 130000 - 13ffff 98000 - 9ffff sa27 64k/32k 140000 - 14ffff a0000 - a7fff sa28 64k/32k 150000 - 15ffff a8000 - affff sa29 64k/32k 160000 - 16ffff b0000 - b7fff sa30 64k/32k 170000 - 17ffff b8000 - bffff sa31 64k/32k 180000 - 18ffff c0000 - c7fff sa32 64k/32k 190000 - 19ffff c8000 - c ffff sa33 64k/32k 1a0000 - 1affff d 0000 - d7fff sa34 64k/32k 1b0000 - 1bffff d 8000 - d ffff sa35 64k/32k 1c0000 - 1cffff e0000 - e7fff sa36 64k/32k 1d0000 - 1dffff e8000 - effff sa37 64k/32k 1e0000 - 1effff f 0000 - f7fff sa38 64k/32k 1f0000 - 1fffff f8000 - fffff 16 at49bv160(t)/161(t) 1427j ? flash ? 01/02 at49bv/lv 160t/161t ? sector address table sector size (bytes/words) x8 address range (a19 - a-1) x16 address range (a19 - a0) sa0 64k/32k 000000 - 00ffff 00000 - 07fff sa1 64k/32k 010000 - 01ffff 08000 - 0ffff sa2 64k/32k 020000 - 02ffff 10000 - 17fff sa3 64k/32k 030000 - 03ffff 18000 - 1ffff sa4 64k/32k 040000 - 04ffff 20000 - 27fff sa5 64k/32k 050000 - 05ffff 28000 - 2ffff sa6 64k/32k 060000 - 06ffff 30000 - 37fff sa7 64k/32k 070000 - 07ffff 38000 - 3ffff sa8 64k/32k 080000 - 08ffff 40000 - 47fff sa9 64k/32k 090000 - 09ffff 48000 - 4ffff sa10 64k/32k 0a0000 - 0affff 50000 - 57fff sa11 64k/32k 0b0000 - 0bffff 58000 - 5ffff sa12 64k/32k 0c0000 - 0cffff 60000 - 67fff sa13 64k/32k 0d0000 - 0dffff 68000 - 6ffff sa14 64k/32k 0e0000 - 0effff 70000 - 77fff sa15 64k/32k 0f0000 - 0f ffff 78000 - 7ffff sa16 64k/32k 100000 - 10ffff 80000 - 87fff sa17 64k/32k 110000 - 11ffff 88000 - 8ffff sa18 64k/32k 120000 - 12ffff 90000 - 97fff sa19 64k/32k 130000 - 13ffff 98000 - 9ffff sa20 64k/32k 140000 - 14ffff a0000 - a7fff sa21 64k/32k 150000 - 15ffff a8000 - affff sa22 64k/32k 160000 - 16ffff b0000 - b7fff sa23 64k/32k 170000 - 17ffff b8000 - bffff sa24 64k/32k 180000 - 18ffff c0000 - c7fff sa25 64k/32k 190000 - 19ffff c8000 - c ffff sa26 64k/32k 1a0000 - 1affff d0000 - d7fff sa27 64k/32k 1b0000 - 1bffff d8000 - d ffff sa28 64k/32k 1c0000 - 1cffff e0000 - e7fff sa29 64k/32k 1d0000 - 1dffff e8000 - effff sa30 64k/32k 1e0000 - 1effff f0000 - f7fff sa31 8k/4k 1f0000 - 1f1fff f8000 - f8fff sa32 8k/4k 1f2000 - 1f3fff f9000 - f9fff sa33 8k/4k 1f4000 - 1f5fff fa000 - fafff sa34 8k/4k 1f6000 - 1f7fff fb000 - fbfff sa35 8k/4k 1f8000 - 1f9fff fc000 - fcfff sa36 8k/4k 1fa000 - 1fbfff fd000 - fdfff sa37 8k/4k 1fc000 - 1fdfff fe000 - fefff sa38 8k/4k 1fe000 - 1fffff ff000 - fffff 17 at49bv160(t)/161(t) 1427j ? flash ? 01/02 notes: 1. x can be v il or v ih . 2. refer to ac programming waveforms on page 23. 3. v h = 12.0v 0.5v. 4. manufacturer code: 1fh (x8); 001fh (x16), device code: c0h (x8)-at49bv/lv16x; 00c0h (x16)-at49bv/lv16x; c2h (x8)-at49bv/lv16xt; 00c2h (x16)-at49bv/lv16xt. 5. see details under ? software product identification entry/exit ? on page 24. 6. v ihpp (min) = 1.65v; v ihpp (max) = 3.6v. for faster erase/program operations, v pp can be set to 5.0v 0.5v or 12v 0.5v. 7. v ilpp (max) = 0.8v. dc and ac operating range at49bv/lv16x(t)-70 at49bv/lv16x(t)-90 operating temperature (case) ind. -40 c-85 c-40 c-85 c v cc power supply 2.65v to 3.3v/3.0v to 3.6v 2.65v to 3.3v/3.0v to 3.6v operating modes mode ce oe we reset v pp ai i/o read v il v il v ih v ih xaid out program/erase (2) v il v ih v il v ih v ihpp (6) ai d in standby/program inhibit v ih x (1) xv ih xxhigh-z program inhibit xxv ih v ih x xv il xv ih x xxx v ih v ilpp (7) output disable x v ih xv ih xhigh-z reset x x x v il xxhigh-z product identification hardware v il v il v ih v ih a1 - a19 = v il ,a9=v h (3) ,a0=v il manufacturer code (4) a1 - a19 = v il ,a9=v h (3) ,a0=v ih device code (4) software (5) v ih a0 = v il ,a1-a19=v il manufacturer code (4) a0 = v ih ,a1-a19=v il device code (4) 18 at49bv160(t)/161(t) 1427j ? flash ? 01/02 notes: 1. in the erase mode, i cc is 50 ma. 2. for 3.3v 20 at49bv160(t)/161(t) 1427j ? flash ? 01/02 input test waveforms and measurement level output test load pin capacitance note: 1. this parameter is characterized and is not 100% tested f=1mhz,t=25 c (1) symbol typ max units conditions c in 46pfv in =0v c out 812pfv out =0v 21 at49bv160(t)/161(t) 1427j ? flash ? 01/02 . ac byte/word load waveforms we controlled ce controlled ac byte/word load characteristics symbol parameter min max units t as ,t oes address, oe setup time 0 ns t ah address hold time 40 ns t cs chip select setup time 0 ns t ch chip select hold time 0 ns t wp write pulse width (we or ce )40ns t ds data setup time 30 ns t dh ,t oeh data, oe hold time 0 ns t wph write pulse width high 30 ns 22 at49bv160(t)/161(t) 1427j ? flash ? 01/02 program cycle waveforms sector or chip erase cycle waveforms notes: 1. oe must be high only when we and ce are both low. 2. for chip erase, the address should be 555. for sector erase, the address depends on what sector is to be erased. (see note 3 under command definitions.) 3. for chip erase, the data should be 10h, and for sector erase, the data should be 30h. program cycle characteristics symbol parameter min typ max units t bp byte/word programming time (v ihpp 23 at49bv160(t)/161(t) 1427j ? flash ? 01/02 notes: 1. these parameters are characterized and not 100% tested. 2. see t oe spec in ? ac read characteristics ? on page 19. data polling waveforms notes: 1. these parameters are characterized and not 100% tested. 2. see t oe spec in ? ac read characteristics ? on page 19. toggle bit waveforms (1)(2)(3) notes: 1. toggling either oe or ce or both oe and ce will operate toggle bit. the t oehp specification must be met by the toggling input(s). 2. beginning and ending state of i/o6 will vary. 3. any address location may be used but the address should not vary. data polling characteristics (1) symbol parameter min typ max units t dh data hold time 10 ns t oeh oe hold time 10 ns t oe oe to output delay (2) ns t wr write recovery time 0 ns toggle bit characteristics (1) symbol parameter min typ max units t dh data hold time 10 ns t oeh oe hold time 10 ns t oe oe to output delay (2) ns t oehp oe high pulse 50 ns t wr write recovery time 0 ns 24 at49bv160(t)/161(t) 1427j ? flash ? 01/02 software product identification entry (1) software product identification exit (1)(6) notes: 1. data format: i/o15 - i/o8 (don ? t care); i/o7 - i/o0 (hex) address format: a11 - a0 (hex), a-1, and a11 - a19 (don ? tcare). 2. a1 - a19 = v il . manufacturer code is read for a0 = v il ; device code is read for a0 = v ih . additional device code is read for address 0003h 3. the device does not remain in identification mode if pow- ered down. 4. the device returns to standard operation mode. 5. manufacturer code: 1fh(x8); 001fh(x16) device code: c0h (x8) - at49bv/lv16x; 00c0h (x16) - at49bv/lv16x; c2h (x8) - at49bv/lv16xt; 00c2h (x16) - at49bv/lv16xt. additional device code: 08h (x8) - at49bv/lv16x(t) 0008h (x16) - at49bv/lv16x(t) 6. either one of the product id exit commands can be used. load data aa to address 555 load data 55 to address aaa load data 90 to address 555 enter product identification mode (2)(3)(5) load data aa to address 555 load data 55 to address aaa load data f0 to address 555 exit product identification mode (4) or load data f0 to any address exit product identification mode (4) sector lockdown enable algorithm (1) notes: 1. data format: i/o15 - i/o8 (don ? tcare);i/o7-i/o0(hex) address format: a11 - a0 (hex), a-1, and a11 - a19 (don ? tcare). 2. sector lockdown feature enabled. load data aa to address 555 load data 55 to address aaa load data 80 to address 555 load data aa to address 555 load data 55 to address aaa load data 60 to sector address pause 200 s (2) 25 at49bv160(t)/161(t) 1427j ? flash ? 01/02 at49bv160(t)/161(t) ordering information t acc (ns) i cc (ma) ordering code package operation range active standby 70 25 0.01 at49bv160-70ci at49bv160-70ti 45c1 48t industrial (-40 to 85 c) 90 25 0.01 AT49BV160-90CI at49bv160-90ti 45c1 48t industrial (-40 to 85 c) 70 25 0.01 at49bv160t-70ci at49bv160t-70ti 45c1 48t industrial (-40 to 85 c) 90 25 0.01 at49bv160t-90ci at49bv160t-90ti 45c1 48t industrial (-40 to 85 c) 70 25 0.01 at49bv161-70ci at49bv161-70ti 48c5 48t industrial (-40 to 85 c) 90 25 0.01 at49bv161-90ci at49bv161-90ti 48c5 48t industrial (-40 to 85 c) 70 25 0.01 at49bv161t-70ci at49bv161t-70ti 48c5 48t industrial (-40 to 85 c) 90 25 0.01 at49bv161t-90ci at49bv161t-90ti 48c5 48t industrial (-40 to 85 c) at49lv160(t)/161(t) ordering information t acc (ns) i cc (ma) ordering code package operation range active standby 70 25 0.01 at49lv161-70ci at49lv161-70ti 48c5 48t industrial (-40 to 85 c) 70 25 0.01 at49lv161t-70ci at49lv161t-70ti 48c5 48t industrial (-40 to 85 c) package type 45c1 45-ball, plastic chip-size ball grid array package (cbga) 48c5 48-ball, plastic chip-size ball grid array package (cbga) 48t 48-lead, plastic thin small outline package (tsop) 26 at49bv160(t)/161(t) 1427j ? flash ? 01/02 packaging information 45c1 ? cbga 2325 orchard parkway san jose, ca 95131 title drawing no. r rev. 45c1 , 45-ball (8 x 6 array), 0.75 mm pitch, 6.5 x 7.5 x 1.2 mm chip-scale ball grid array package (cbga) a 45c1 4/11/01 dimensions in millimeters and (inches). controlling dimension: millimeters. a b c d e f 65 87 4321 5.25 (0.207) 0.30 (0.014) dia ball typ 3.75 (0.148) 1.20 (0.047) max 0.15 (0.006)min 6.60 (0.260) 6.40 (0.252) 7.60 (0.299) 7.40 (0.291) 0.75 (0.0295) bsc non-accumulative 0.625 (0.025) ref 1.875(0.074) ref a1 id 0.75 (0.0295) bsc non-accumulative 27 at49bv160(t)/161(t) 1427j ? flash ? 01/02 48c5 ? cbga 2325 orchard parkway san jose, ca 95131 title drawing no. r rev. 48c5 , 48-ball (6 x 8 array), 0.80 mm pitch, 6 x 8 x 1.2 mm chip-scale ball grid array package (cbga) a 48c5 10/18/01 dimensions in millimeters and (inches). controlling dimension: millimeters. a b c d e f g h 6 54321 5.60 (0.220) 0.40 (0.016) dia ball typ 4.00(0.157) 1.20 (0.047) max 0.25 (0.010)min 6.10 (0.240) 5.90 (0.232) 8.10 (0.319) 7.90 (0.311) 0.80 (0.0315) bsc non-accumulative 1.20 (0.047) ref 1.00(0.039) ref a1 id 0.80 (0.0315) bsc non-accumulative top view side view bottom view 28 at49bv160(t)/161(t) 1427j ? flash ? 01/02 48t ? tsop 2325 orchard parkway san jose, ca 95131 title drawing no. r rev. 48t , 48-lead (12 x 20 mm package) plastic thin small outline package, type i (tsop) b 48t 10/18/01 pin 1 0o ~ 8o d1 d pin 1 identifier b e e a a1 a2 c l gage plane seating plane l1 notes: 1. this package conforms to jedec reference mo-142, variation dd. 2. dimensions d1 and e do not include mold protrusion. allowable protrusion on e is 0.15 mm per side and on d1 is 0.25 mm per side. 3. lead coplanarity is 0.10 mm maximum. common dimensions (unit of measure = mm) symbol min nom max note a ? ? 1.20 a1 0.05 ? 0.15 a2 0.95 1.00 1.05 d 19.80 20.00 20.20 d1 18.30 18.40 18.50 note 2 e 11.90 12.00 12.10 note 2 l 0.50 0.60 0.70 l1 0.25 basic b 0.17 0.22 0.27 c 0.10 ? 0.21 e 0.50 basic printed on recycled paper. ? atmel corporation 2002. atmel corporation makes no warranty for the use of its products, other than those expressly contained in the company ? s standard warranty whichisdetailedinatmel ? s terms and conditions located on the company ? s web site. the company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. no licenses to patents or other intellectual property of atmel are granted by the company in connection with the sale of atmel products, expressly or by implication. atmel ? s products are not authorized for use as critical components in life support devices or systems. atmel headquarters atmel operations corporate headquarters 2325 orchard parkway san jose, ca 95131 tel 1(408) 441-0311 fax 1(408) 487-2600 europe atmel sarl route des arsenaux 41 casa postale 80 ch-1705 fribourg switzerland tel (41) 26-426-5555 fax (41) 26-426-5500 asia atmel asia, ltd. room 1219 chinachem golden plaza 77 mody road tsimhatsui east kowloon hong kong tel (852) 2721-9778 fax (852) 2722-1369 japan atmel japan k.k. 9f, tonetsu shinkawa bldg. 1-24-8 shinkawa chuo-ku, tokyo 104-0033 japan tel (81) 3-3523-3551 fax (81) 3-3523-7581 memory atmel corporate 2325 orchard parkway san jose, ca 95131 tel 1(408) 436-4270 fax 1(408) 436-4314 microcontrollers atmel corporate 2325 orchard parkway san jose, ca 95131 tel 1(408) 436-4270 fax 1(408) 436-4314 atmel nantes la chantrerie bp 70602 44306 nantes cedex 3, france tel (33) 2-40-18-18-18 fax (33) 2-40-18-19-60 asic/assp/smart cards atmel rousset zone industrielle 13106 rousset cedex, france tel (33) 4-42-53-60-00 fax (33) 4-42-53-60-01 atmel colorado springs 1150 east cheyenne mtn. blvd. colorado springs, co 80906 tel 1(719) 576-3300 fax 1(719) 540-1759 atmel smart card ics scottish enterprise technology park maxwell building east kilbride g75 0qr, scotland tel (44) 1355-803-000 fax (44) 1355-242-743 rf/automotive atmel heilbronn theresienstrasse 2 postfach 3535 74025 heilbronn, germany tel (49) 71-31-67-0 fax (49) 71-31-67-2340 atmel colorado springs 1150 east cheyenne mtn. blvd. colorado springs, co 80906 tel 1(719) 576-3300 fax 1(719) 540-1759 biometrics/imaging/hi-rel mpu/ high speed converters/rf datacom atmel grenoble avenue de rochepleine bp 123 38521 saint-egreve cedex, france tel (33) 4-76-58-30-00 fax (33) 4-76-58-34-80 e-mail literature@atmel.com web site http://www.atmel.com 1427j ? flash ? 01/02 /xm at m e l ? is the registered trademark of atmel. other terms and product names may be the trademarks of others. |
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